1414 Degrees Limited logo

1414 Degrees Limited (14D)

Market Open
ASX ASX
8.56M Market Cap
53.16 P/E Ratio
- Div Yield
14.62M Volume
1.09 Eps
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Summary

14D is not paying dividends to its shareholders.
The last earnings report, released on Feb 26, 2026, exceeded the consensus estimates by 0%. On average, the company has surpassed earnings expectations by 0%, based on the last three reports.
1414 Degrees Limited has completed 1 stock splits, with the recent split occurring on Jul 18, 2023.
The company's stock is traded on one exchange.

1414 Degrees Limited (14D) FAQ

On which exchange is it traded?

1414 Degrees Limited is listed on ASX.

What is its stock symbol?

The ticker symbol is 14D.

Does it pay dividends? What is the current yield?

It does not pay dividends to its shareholders.

What is its market cap?

As of today, the market cap is 8.56M.

Has 1414 Degrees Limited ever had a stock split?

1414 Degrees Limited had 1 splits and the recent split was on Jul 18, 2023.

1414 Degrees Limited Profile

Independent Power and Renewable Electricity Producers Industry
Utilities Sector
Dr. Kevin Charles Moriarty B.Sc., BSc (Hons), MAusIMM, Ph.D. CEO
ASX Exchange
Q7133Z109 CUSIP
AU Country
- Employees
- Last Dividend
18 Jul 2023 Last Split
- IPO Date

Overview

Episil-Precision Inc., founded in 1998, is a renowned player in the semiconductor industry. The company specializes in the development, manufacturing, and sale of silicon epitaxy wafers and compound semiconductor epitaxial wafers. With its headquarters in Hsinchu City, Taiwan, it operates not only locally but also in key international markets such as Japan, China, and others. As a subsidiary of Episil Technologies Inc., Episil-Precision plays a crucial role in advancing semiconductor technology across various sectors. The company's contributions are vital in meeting the demands of consumer electronics, automotive electronics, industrial control manufacturing, telecommunications, and computer industries.

Products and Services

  • Buried-Layer Epitaxy Wafers: These wafers are designed to improve the performance of high-power field-effect transistors (FETs) and diodes. This technology facilitates better insulation and higher power capabilities for electronic devices.
  • Multi-Layer Epitaxy Wafers: Offering advanced multi-layer structures, these wafers are crucial for developing more complex semiconductor devices. They enable the creation of devices with enhanced functionality and performance, suitable for a wide range of applications.
  • Silicon Epitaxy on SOI (Silicon On Insulator) Wafers: These are specialized wafers that use the SOI technology to reduce power consumption while increasing the speed of semiconductor devices. Their applications span across various fields, from consumer electronics to automotive and industrial controls.
  • GaN Epitaxial Wafers: Focused on gallium nitride (GaN) technology, these wafers are essential for devices that require high efficiency and power density. GaN technology is pivotal in telecommunications and RF (radio frequency) applications.
  • Silicon Carbide (SiC) Epitaxial Wafers: Known for their exceptional thermal and electrical properties, SiC epitaxial wafers are primarily used in high-power applications. They are critical in the development of power components like insulated-gate bipolar transistors (IGBTs) and power management ICs (PMICs), offering improved performance in harsh environments.

Contact Information

Address: Western Plant, Tonsley, SA, Australia, 5042
Phone: 61 8 8357 8273