SICC Co., Ltd. logo

SICC Co., Ltd. (2631)

Market Closed
11 Aug, 08:00
HKEX HKEX
79. 70
HKD
+3.5
+4.5932%
HKD
42.13B Market Cap
- P/E Ratio
- Div Yield
3.51M Volume
-0.09 Eps
76.2 HKD
Previous Close
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Day Range
74.15 80.55
Year Range
40.82 138.7
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Summary

2631 closed today higher at 79.7 HKD, an increase of 4.5932% from yesterday's close, completing a monthly increase of 42.576% or 23.8 HKD. Over the past 12 months, 2631 stock gained 36.123%.
2631 is not paying dividends to its shareholders.
The stock of the company had never split.
The company's stock is traded on one exchange.

2631 Chart

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SICC Co., Ltd. (2631) FAQ

What is the stock price today?

The current price is 79.70 HKD.

On which exchange is it traded?

SICC Co., Ltd. is listed on HKEX.

What is its stock symbol?

The ticker symbol is 2631.

Does it pay dividends? What is the current yield?

It does not pay dividends to its shareholders.

What is its market cap?

As of today, the market cap is 42.13B.

Has SICC Co., Ltd. ever had a stock split?

No, there has never been a stock split.

SICC Co., Ltd. Profile

Semiconductors & Semiconductor Equipment Industry
Information Technology Sector
Mr. Teo Nee Chuan CEO
HKEX Exchange
- ISIN
CN Country
1,326 Employees
- Last Dividend
- Last Split
- IPO Date

Overview

SICC Co., Ltd., established in 2010 and headquartered in Jinan, China, specializes in the research, development, production, and sale of silicon carbide semiconductor materials. This Advanced material is critical for a variety of high-tech industries globally, making SICC a key player in the field. The company has a significant international presence, with its products being utilized in several cutting-edge sectors such as microwave electronics and power electronics. Furthermore, SICC has expanded its market reach by exporting its high-quality semiconductor materials, underscoring its vital role in the global supply chain of semiconductor components.

Products and Services

  • Conductive Silicon Carbide Substrate Materials

    These are foundational components used in the manufacturing of electronic devices that require high efficiency and thermal conductivity. By providing a high-quality silicon carbide substrate, SICC enables the development of devices that can operate at higher power levels and temperatures, making them ideal for power electronics applications.

  • Semi-Insulating Substrate Materials

    A crucial material for applications that require high purity and electrical insulation, semi-insulating substrates from SICC support the development of microwave electronics, among other technologies. These materials are designed to meet stringent industry standards, offering reliability and performance enhancements in devices that operate in high-frequency conditions.

Contact Information

Address: No.99 South Tianyue Road, Jinan, China, 250118
Phone: 86 531 6990 0616