Energy Transition Special Opportunities (ETSS)

The Roundhill Memory ETF (DRAM) is designed to offer investors a focused investment opportunity within the worldwide semiconductor memory industry. Its portfolio is strategically constructed to prioritize leading companies that command substantial market presence and revenue in memory products and associated technologies. This includes a broad spectrum of memory solutions such as high bandwidth memory, dynamic random-access memory (DRAM), NAND flash memory (encompassing solid-state drives built on NAND), NOR flash memory, hard disk drives, and specialized or embedded memory components. The fund's deliberate emphasis on major, large-capitalization firms is deemed essential for supporting the advancements in artificial intelligence. To execute its active investment approach, the fund has the flexibility to invest in common stocks or financial derivatives, such as swaps or forwards. The allocation of portfolio weights follows a modified market capitalization methodology, with a safeguard that no single company can constitute more than 25% of the fund. These weightings are determined by the advisor's evaluation of each company's market position and revenue generation within the memory sector. The portfolio undergoes rebalancing at a minimum of every three months.